Author:
Lu Rongkai,Li Siqin,Lu Jianguo,Lu Bojing,Yang Ruqi,Lu Yangdan,Shao Wenyi,Zhao Yi,Zhu Liping,Zhuge Fei,Ye Zhizhen
Abstract
Abstract
Amorphous oxide semiconductors (AOS) have unique advantages in transparent and flexible thin film transistors (TFTs) applications, compared to low-temperature polycrystalline-Si (LTPS). However, intrinsic AOS TFTs are difficult to obtain field-effect mobility (μ
FE) higher than LTPS (100 cm2/(V·s)). Here, we design ZnAlSnO (ZATO) homojunction structure TFTs to obtain μ
FE = 113.8 cm2/(V·s). The device demonstrates optimized comprehensive electrical properties with an off-current of about 1.5 × 10–11 A, a threshold voltage of –1.71 V, and a subthreshold swing of 0.372 V/dec. There are two kinds of gradient coupled in the homojunction active layer, which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility. Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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