Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays-Reference-Cited by-同舟云学术

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Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays

Published:2015-02-02 Issue:5 Volume:106 Page:053503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Qingjun¹,Feng Lisha¹,Wu Chuanjia¹,Sun Rujie¹,Li Xifeng²,Lu Bin¹,Ye Zhizhen¹,Lu Jianguo¹

Affiliation:

1. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906999

Reference20 articles.

1. Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

2. Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

5. High-performance flexible zinc tin oxide field-effect transistors

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