Performance Enhancement of ZITO Thin-Film Transistors via Graphene Bridge Layer by Sol–Gel Combustion Process
Author:
Affiliation:
1. Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
Funder
Science and Technology Commission of Shanghai Municipality
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b07148
Reference31 articles.
1. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
2. High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process
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4. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
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