High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process-Reference-Cited by-同舟云学术

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Published:2012-12-18 Issue:1 Volume:29 Page:151-157
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Zhao Yunlong¹,Duan Lian¹,Dong Guifang¹,Zhang Deqiang¹,Qiao Juan¹,Wang Liduo¹,Qiu Yong¹

Affiliation:

1. Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la304581c

Reference42 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

3. High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors

4. Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator

5. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

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