Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Abstract

The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT performances by manipulating the concentration and the distribution of oxygen vacancies, and a reasonable physical model was proposed based on experimental and simulation results. It is difficult to mediate the contradiction between mobility and threshold voltage for the single channel. Via a heterojunction channel strategy, desirable TFT performances, with mobility of 12.5 cm2/Vs, threshold voltage of 1.2 V and Ion/Ioff of 3 × 109, are achieved when the oxygen-vacancy-enriched layer gets close to the gate insulator (GI). The enhanced performances can be mainly attributed to the formation of two-dimensional electron gas (2DEG), the insensitive potential barrier and the reasonable distribution of oxygen vacancy. On the contrary, when the oxygen-vacancy-enriched layer stays away from GI, all the main performances degenerate due to the vulnerable potential well. The findings may facilitate the development and application of heterojunction channels for improving the performances of electronic devices.