Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803706
Reference56 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
3. Novel ZrInZnO Thin-film Transistor with Excellent Stability
4. The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
5. Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
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