Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
Author:
Affiliation:
1. Energy Research Institute @ NTU (ERI@N)
2. Nanyang Technological University
3. Singapore 637553
4. School of Materials Science and Engineering
5. Singapore 639798
Abstract
The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.
Funder
Ministry of Education - Singapore
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/QI/D0QI00038H
Reference167 articles.
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