Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
Author:
Affiliation:
1. Department of Photonics and Display Institute
2. National Chiao Tung University
3. Hsinchu
4. Republic of China
5. Department of Mechanical Engineering
6. Vignan University
7. Guntur
8. India
Abstract
A co-sputtering of dual InGaZnO and ZnO targets, abbreviated by ZnO co-sputtered IGZO, is used to fabricate a high performance indium gallium zinc oxide (IGZO) thin film transistor in this work.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA08793G
Reference26 articles.
1. Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
2. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors
3. Nitrogenated amorphous InGaZnO thin film transistor
4. Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer
5. Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
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