Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers-Reference-Cited by-同舟云学术

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Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

Published:2011-10 Issue:10 Volume:32 Page:1397-1399
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Po-Tsun,Chou Yi-Teh,Teng Li-Feng,Li Fu-Hai,Fuh Chur-Shyang,Shieh Han-Ping D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6028517/05995139.pdf?arnumber=5995139

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