37.2: Development of High Performance Oxide TFTs Using Back‐Channel‐Etch Structure With Copper Electrodes
Author:
Affiliation:
1. TCL China Star Optoelectronics Technology Co., Ltd. Shenzhen China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15960
Reference18 articles.
1. Highly stable amorphous indium-zinc-oxide thin-film transistors with back-channel wet-etch process;Dongxiang L;Phys. Status Solidi RRL,2014
2. Thin-Film Transistors With Neodymium-Incorporated Indium–Zinc-Oxide Semiconductors;Erlong S;IEEE Trans. Electron Devices,2016
3. Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping;Hua X;ACS Appl. Mater. Interfaces,2019
4. Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor;Kuankuan L;J Mater Sci,2019
5. Modification of Electrode-Etchant for Sidewall Profile Control and Reduced Back-Channel Corrosion of Inverted-Staggered Metal-Oxide TFTs;Park Y. C.;ECS Journal of Solid State Science and Technology,2015
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