Highly stable amorphous indium-zinc-oxide thin-film transistors with back-channel wet-etch process
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Ultra-high long-term stability of oxide-TTFTs under current stress
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5. ZnO-based transparent thin-film transistors
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