P-20: Effects of N2 O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors-Reference-Cited by-同舟云学术

P-20: Effects of N2 O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors

Published:2017-05 Issue:1 Volume:48 Page:1299-1302
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Liang Ting¹,Zhang Xiaodong¹,Zhou Xiaoliang²,Zhang Letao¹,Lu Huiling¹,Lu Hongjuan¹,Zhang Shengdong¹²

Affiliation:

1. School of Electronic and Computer Engineering; Peking University; Shenzhen China 518055

2. Institute of Microelectronics; Peking University; Beijing China 100871

Publisher

Wiley

Reference8 articles.

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3. High performance amorphous oxide thin film transistors with self-aligned top-gate structure;Park;Electron Devices Meeting. Iedm technical Digest international,2009

4. High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel;Jeong;Appl. Phys. Lett.,2007

5. Highly stable amorphous indium-zinc-oxide thin-film transistors with back -channel wet-etch process;Luo;Phys. Status Solidi RRL,2014

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