Back-Channel-Etched InGaZnO Thin-Film Transistors with Au Nanoparticles on the Back Channel Surface
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s13391-019-00189-w.pdf
Reference37 articles.
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3. Wu, Z.H., Yao, Z.Q., Liu, S.L., Yuan, B., Zhang, Y.K., Liang, Y., Wang, Z., Tang, X.S., Shao, G.S.: Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping. J. Mater. Chem. C 5, 1206–1215 (2017)
4. Han, K.L., Cho, H.S., Ok, K.C., Park, J.S.: Comparative study on hydrogen behavior in InGaZnO thin film transistors with a SiO2/SiNx/SiO2 buffer on polyimide and glass substrates. Electron. Mater. Lett. 14, 749–754 (2018)
5. Lim, W.T., Jang, J.H., Kim, S.H., Norton, D.P., Craciun, V., Pearton, S.J., Ren, F., Shen, H.: High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates. Appl. Phys. Lett. 93, 082102 (2008)
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