Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an n-Type Semiconductor Interlayer-Reference-Cited by-同舟云学术

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an n-Type Semiconductor Interlayer

Published:2021-03-15 Issue:11 Volume:13 Page:13452-13458
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Yiru¹^ORCID,Kang Limin¹,Liu Zhenliang¹,Wan Zuteng¹,Yin Jiang¹,Gao Xu²^ORCID,Xia Yidong¹,Liu Zhiguo¹

Affiliation:

1. Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People’s Republic of China

2. Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, People’s Republic of China

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c19603

Reference47 articles.