Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

Author:

Sekitani Tsuyoshi1,Yokota Tomoyuki2,Zschieschang Ute3,Klauk Hagen3,Bauer Siegfried4,Takeuchi Ken1,Takamiya Makoto5,Sakurai Takayasu5,Someya Takao126

Affiliation:

1. Department of Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

2. Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

3. Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany.

4. Soft Matter Physics (SOMAP), Johannes Kepler University Linz, A-4040 Linz, Austria.

5. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan.

6. Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan.

Abstract

Flexible Organic Flash Memory Advances in organic electronics have enabled the fabrication of a number of core devices on flexible plastic substrates. These include transistors, light-emitting diodes, actuators, and sensors. Sekitani et al. (p. 1516 ) use a low-temperature hybrid dielectric based on a thin metal oxide and a self-assembled monolayer to develop flexible floating-gate memory transistors with small program and erase voltages. These are integrated into a flexible large-area sensor area, capable of storing values from applied external pressures.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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