Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability-Reference-Cited by-同舟云学术

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Published:2023-08-04 Issue:8 Volume:5 Page:4308-4315
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Tarsoly Gergely¹^ORCID,Lee Jae-Yun¹,Heo Kwan-Jun¹²,Kim Sung-Jin¹^ORCID

Affiliation:

1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Korea

2. R&D Center SK Hynix, 2091, Gyeongchung-daero, Bubal-eup, Icheon-si, Gyeonggi-do 13558, Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Chungbuk National University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00579

Reference54 articles.

1. Novel nanostructured indium tin oxide electrode for electrochemical immunosensors: Suitability for the detection of TNF-α

2. Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

3. Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

4. Spray‐Pyrolyzed High‐k Zirconium‐Aluminum‐Oxide Dielectric for High Performance Metal‐Oxide Thin‐Film Transistors for Low Power Displays

5. Aqueous-solution-driven HfGdO gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits

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