Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics-Reference-Cited by-同舟云学术

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Author:

Zhu Li¹²³⁴⁵,He Gang¹²³⁴⁵^ORCID,Lv Jianguo⁶⁷⁸⁵,Fortunato Elvira⁹¹⁰¹¹¹²¹³^ORCID,Martins Rodrigo⁹¹⁰¹¹¹²¹³

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230039

5. P. R. China

6. Department of Physics and Electronic Engineering

7. Hefei Normal University

8. Hefei 230061

9. Department of Materials Science/CENIMAT-I3N

10. Faculty of Sciences and Technology

11. New University of Lisbon

12. CEMOP-UNINOVA

13. Portugal

Abstract

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference55 articles.

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献