Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route-Reference-Cited by-同舟云学术

Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

Published:2019 Issue:4 Volume:7 Page:1048-1056
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Koslowski Nico¹²³⁴⁵,Sanctis Shawn¹²³⁴⁵^ORCID,Hoffmann Rudolf C.¹²³⁴⁵,Bruns Michael⁶⁷⁸⁹¹⁰,Schneider Jörg J.¹²³⁴⁵^ORCID

Affiliation:

1. Fachbereich Chemie

2. Eduard-Zintl-Institut für Anorganische und Physikalische Chemie

3. Technische Universität Darmstadt

4. Alarich-Weiss-Str. 12

5. 64287 Darmstadt

6. Institute for Applied Materials (IAM-ESS) and Karlsruhe Nano Micro Facility (KNMF)

7. Hermann-von-Helmholtz-Platz 1

8. Karlsruhe Institute of Technology (KIT)

9. 76344 Eggenstein-Leopoldshafen

10. Germany

Abstract

Generation of dielectric amorphous aluminum oxide using a novel chimie douce molecular precursor route is reported.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04660C

Reference57 articles.

1. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

2. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

3. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

4. High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

5. High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

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