Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC30550C
Reference41 articles.
1. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors
2. High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air
3. High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method
4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
5. All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics
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