Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs-Reference-Cited by-同舟云学术

Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al₂O₃/ β-Ga₂O₃ MOSCAPs

Published:2023-07 Issue:7 Volume:70 Page:3711-3717
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Manikanthababu N.¹^ORCID,Joishi C.²^ORCID,Biswas J.²^ORCID,Prajna K.³^ORCID,Asokan K.⁴,Vas J. V.⁵,Medwal R.⁶,Meena R. C.⁴,Lodha S.²^ORCID,Singh R.⁷^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Delhi, New Delhi, India

2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Maharashtra, Mumbai, India

3. Indira Gandhi Center for Atomic Research, Kalpakkam, India

4. Aruna Asaf Ali Marg, Inter University Accelerator Centre, New Delhi, India

5. Laboratory for In-Situ and Operando Electron Nanoscopy (LISION), School of Material Science and Engineering (MSE), Nanyang Technological University, Jurong West, Singapore

6. Department of Physics, Indian Institute of Technology Kanpur, Kanpur, Kalyanpur, India

7. Department of Physics and the Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

Funder

Department of Science and Technology (DST), India, from the Brazil, Russia, India, China and South Africa (BRICS) Project

MeitY and DST, Government of India, through the Nanoelectronics Network for Research and Application (NNetRA) Project

DST, India, under the Brazil, Russia, India, China and South Africa (BRICS) Cooperation Scheme DST/IMRCD/BRICS/Pilot Call 3/GaO-Nitrides/2019

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10123075.pdf?arnumber=10123075

Reference62 articles.

1. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3

2. Investigation of radiation damage using thermal spike model for SHI irradiation on Al₂O₃

3. Vertical Ga₂O₃ MOSFET With Magnesium Diffused Current Blocking Layer

4. Swift heavy ion-induced modification of Al2O3 and MgO surfaces

5. Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric

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