Solution-processed high entropy metal oxides as dielectric layers with high transmittance and performance and application in thin film transistors-Reference-Cited by-同舟云学术

Solution-processed high entropy metal oxides as dielectric layers with high transmittance and performance and application in thin film transistors

Published:2023-08 Issue: Volume:40 Page:103147
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Liang Zhihao^ORCID,Wu Weijing,Fu Xiao,Ning Honglong^ORCID,Su Guoping^ORCID,Wang Hongcheng,Qiu Tian,Yang Zhao,Yao Rihui,Peng Junbiao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference50 articles.

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3. Performance enhancement and bending restoration for flexible amorphous indium gallium zinc oxide thin-film transistors by low-temperature supercritical dehydration treatment;Zhang;ACS Appl. Mater. Interfaces,2021

4. A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature;Hsu;IEEE Electron Dev. Lett.,2013

5. Recent progress on high-capacitance polymer gate dielectrics for flexible low-voltage transistors;Nketia-Yawson;Adv. Funct. Mater.,2018

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