Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors-Reference-Cited by-同舟云学术

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Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors

Published:2018-09-02 Issue:42 Volume:28 Page:1802201
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Nketia-Yawson Benjamin¹,Noh Yong-Young¹^ORCID

Affiliation:

1. Department of Energy and Materials Engineering; Dongguk University; 30 Pildong-ro, 1-gil Jung-gu Seoul 04620 Republic of Korea

Funder

Center for Advanced Soft-Electronics

Ministry of Science ICT and Future Planning

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201802201/fullpdf

Reference215 articles.

1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

4. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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