Reliability issues of amorphous oxide semiconductor-based thin film transistors
Author:
Affiliation:
1. State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), Shenzhen 518060, China
2. College of Electronics and Information Engineering (Shenzhen University), Shenzhen 518060, China
Abstract
Funder
National Natural Science Foundation of China
Shenzhen Science and Technology Innovation Program
Publisher
Royal Society of Chemistry (RSC)
Link
http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01392A
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1. Metal oxide semiconductors with highly concentrated oxygen vacancies for gas sensing materials: A review
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4. Basic materials physics of transparent conducting oxides
5. Limitations of In2O3 as a transparent conducting oxide
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