Limitations of In2O3 as a transparent conducting oxide-Reference-Cited by-同舟云学术

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Limitations of In2O3 as a transparent conducting oxide

Published:2019-08-19 Issue:8 Volume:115 Page:082105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peelaers H.¹²^ORCID,Kioupakis E.³^ORCID,Van de Walle C. G.¹^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA

2. Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, USA

3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5109569

Reference36 articles.

1. Past achievements and future challenges in the development of optically transparent electrodes

2. TFT-LCD technology

3. Transparent Conducting Oxides for Photovoltaics

4. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

5. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

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1. Enhancement of short-circuit current density in silicon heterojunction solar cells by hydrogenated multiple-doped In2O3 thin films;Solar Energy Materials and Solar Cells;2024-04

2. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024

3. Electrical and optical properties of (In1-xSnx)2O3(1+δ) films (0.03 ≤ x ≤ 0.40, δ ≈ 0.28) grown on Si substrates using co-sputtering of In2O3 and SnO2;Ceramics International;2022-12

4. High-performance multiple-doped In₂O₃ transparent conductive oxide films in near-infrared light region;Journal of Applied Physics;2022-10-07

5. Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors;Advanced Materials Technologies;2022-09-30

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