Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping-Reference-Cited by-同舟云学术

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Author:

Zhao Han-Lin¹,Shan Fei²^ORCID,Wang Xiao-Lin¹,Tarsoly Gergely³^ORCID,Lee Jae-Yun¹,Kim Sung-Jin¹^ORCID

Affiliation:

1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, South Korea

2. College of Ocean, Jiangsu University of Science and Technology, Zhenjiang, China

3. Department of Chemistry, Konkuk University, Seoul, Gwangjin-gu, Republic of Korea

Funder

Ministry of Science and ICT (MSIT), Korea, under the Grand Information Technology Research Center Support Program

Institute for Information and Communications Technology Planning and Evaluation (IITP);

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education

Chungbuk National University BK21 Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference38 articles.

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