Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871511
Reference42 articles.
1. Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
2. Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
3. Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C
4. Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
5. Present status of amorphous In–Ga–Zn–O thin-film transistors
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