Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature-Reference-Cited by-同舟云学术

Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

Published:2008-10-06 Issue:14 Volume:93 Page:142111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cho Doo-Hee,Yang Shinhyuk,Byun Chunwon,Shin Jaeheon,Ryu Min Ki,Park Sang-Hee Ko,Hwang Chi-Sun,Chung Sung Mook,Cheong Woo-Seok,Yoon Sung Min,Chu Hye-Yong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2998612

Reference13 articles.

1. Proceedings of the SID 08 Digest;Lee J. -H.,2008

2. Proceedings of the SID 08 Digest;Son K. -S.,2008

3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

4. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

5. Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

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