Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs-Reference-Cited by-同舟云学术

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Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs

Published:2024-09 Issue:9 Volume:71 Page:5437-5442
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

An Seong Ui¹^ORCID,Ahn Dae-Hwan²^ORCID,Ju Gijun¹^ORCID,Chen Simin¹^ORCID,Seop Ji Yo¹,Han Jae-Hoon³^ORCID,Kim Jaekyun¹,Kim Younghyun¹^ORCID

Affiliation:

1. Department of Photonics and Nanoelectronics, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan, South Korea

2. Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul, South Korea

3. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul, South Korea

Funder

National Research Foundation of Korea (NRF) grant

Korea Government

Korea Basic Science Institute (National research Facilities and Equipment Center) grant

Ministry of Education

Technology Innovation Program through the Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10620402.pdf?arnumber=10620402

Reference31 articles.

1. Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors

2. 58.3: A Novel Highly Transparent 6-in. AMOLED Display Consisting of IGZO TFTs

3. 21.2:Distinguished Paper: 55-inch OLED TV using InGaZnO TFTs with WRGB Pixel Design

4. Comparative study of aluminum and nickel contact electrodes for indium–tin–zinc oxide thin film transistors using oxygen vacancy diffusion model

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