Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C-Reference-Cited by-同舟云学术

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Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Published:2010-02-22 Issue:6 Volume:20 Page:921-926
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yoon Sung-Min,Yang Shinhyuk,Byun Chunwon,Park Sang-Hee K.,Cho Doo-Hee,Jung Soon-Won,Kwon Oh-Sang,Hwang Chi-Sun

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.200902095/fullpdf

Reference27 articles.

1. Transparent Electronics

2. Towards See-Through Displays: Fully Transparent Thin-Film Transistors Driving Transparent Organic Light-Emitting Diodes

3. A ferroelectric transparent thin‐film transistor

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