P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability-Reference-Cited by-同舟云学术

P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

Published:2024-04 Issue:S1 Volume:55 Page:661-663
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Xie Jingye¹,Shi Jianbing¹,Dong Junchen²,Wang Zongwei¹,Cai Yimao¹,Han Dedong¹³⁴,Zhang Xing¹⁵

Affiliation:

1. School of integrated circuits Peking University Beijing China 100091

2. School of Information & Communication Engineering Beijing Information Science and Technology University Beijing China 100101

3. Beijing Advanced Innovation Center for Integrated Circuits Beijing China 100871

4. Beijing Superstring Academy of Memory Technology Beijing China 100176

5. Peking University Shenzhen Graduate School Shenzhen China 518055

Abstract

In this work, thermal stability of InZnO (IZO) and Al‐doped InZnO (IAZO) transistors are studied. With a consecutive annealing pre‐treatment at 300 ℃ in air, the IAZO transistors show superior electrical properties to the IZO transistors, demonstrating that element Al plays a role as stabilizer for maintaining device performance. Our work paves the way for practical application of the oxide transistors in back‐end‐of‐line (BEOL) scenarios.

Publisher

Wiley

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