Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer-Reference-Cited by-同舟云学术

Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

Published:2019 Issue:58 Volume:9 Page:33800-33805
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

He Gang¹²³⁴⁵^ORCID,Wang Die¹²³⁴⁵,Ma Rui⁶⁷⁸⁹¹⁰,Liu Mao⁶⁷⁸⁹¹⁰,Cui Jingbiao¹¹¹²¹³¹⁴

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230601

5. P. R. China

6. Key Laboratory of Materials Physics

7. Anhui Key Laboratory of Nanomaterials and Nanostructures

8. Institute of Solid State Physics

9. Chinese Academy of Sciences

10. Hefei 230031

11. Department of Physics

12. University of North Texas

13. Denton

14. USA

Abstract

In the current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment.

Funder

National Natural Science Foundation of China

Anhui University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA07369H

Reference28 articles.

1. Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

2. Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

3. Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

4. Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

5. Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

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