Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer-Reference-Cited by-同舟云学术

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Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Published:2016-07-11 Issue:2 Volume:109 Page:023514
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Z. X.¹,Xu J. P.¹,Liu L.¹,Huang Y.¹,Lai P. T.²,Tang W. M.³

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Pokfulam, Hong Kong

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

Funder

National Natural Science Foundation of China (NSFC)

University of Hong Kong (HKU)

Hong Kong Polytechnic University (PolyU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4958837

Reference29 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

3. Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

4. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

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1. Improved interface and dark current properties of InGaAs photodiodes by high-density N2 plasma and stoichiometric Si3N4 passivation;Infrared Physics & Technology;2022-05

2. Advances in La-Based High-k Dielectrics for MOS Applications;Coatings;2019-03-27

3. Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer;RSC Advances;2019

4. Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content;Chinese Physics Letters;2018-07

5. Effective passivation of HfO2 /Ge interface by using nitrided germanate as passivation interlayer;physica status solidi (a);2017-03-22

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