Effective passivation of HfO2 /Ge interface by using nitrided germanate as passivation interlayer-Reference-Cited by-同舟云学术

Effective passivation of HfO2 /Ge interface by using nitrided germanate as passivation interlayer

Published:2017-03-22 Issue:6 Volume:214 Page:1600974
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Cheng Zhi Xiang¹,Xu Jing Ping¹,Liu Lu¹,Huang Yong¹,Lai Pui To²,Tang Wing Man³

Affiliation:

1. School of Optical and Electronic Information; Huazhong University of Science and Technology; Wuhan 430074 P.R. China

2. Department of Electrical and Electronic Engineering; The University of Hong Kong; Pokfulam Road Hong Kong

3. Department of Applied Physics; The Hong Kong Polytechnic University; Hung Hom Hong Kong

Funder

National Natural Science Foundation of China

University of Hong Kong

Hong Kong Polytechnic University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600974/fullpdf

Reference26 articles.

1. Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

2. High-k/Ge MOSFETs for future nanoelectronics

3. Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

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