Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer-Reference-Cited by-同舟云学术

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Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer

Published:2021-08 Issue:4 Volume:36 Page:533-537
ISSN:1000-2413
Container-title:Journal of Wuhan University of Technology-Mater. Sci. Ed.
language:en
Short-container-title:J. Wuhan Univ. Technol.-Mat. Sci. Edit.

Author:

Li Chunxia,Zhang Weifeng

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11595-021-2441-7.pdf

Reference22 articles.

1. Lim CM, Zhao ZQ, Sumita K, et al. Operation of (111) Ge-on-Insula-tor n-channel MOSFET Fabricated by Smart-Cut Technology[J]. IEEE Electron Dev. Lett., 2020, 41(8): 1 266–1 266

2. Lee TI, Ahn HJ, Kim MJ, et al. Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current[J]. IEEE Electron Dev. Lett., 2019, 40(4): 502–505

3. Xie Q, Deng S, Schaekers M. Germanium Surface Passivation and Atomic Layer Deposition of High-k dielectrics-a Tutorial Review on Ge-based MOS Capacitors[J]. Semicond. Sci. Tech., 2012, 27: 074012–1–074012–18

4. Cheng ZX, Xu JP, Liu L, et al. Effective Passivation of HfO2/Ge Interface by using Nitrided Germanate as Passivation Interlayer[J]. Phys. Status Solidi A, 2017, 214: 16009741–1–16009741–6

5. Li CX, Leung CH, Lai PT, et al. Effects of Fluorine Incorporation on the Properties of Ge p-MOS Capacitors with HfTiON Dielectric[J]. Solid-State Electron., 2010, 54: 675–679

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1. Segregation of Si and Mg at Fe(110)/Al(110) Interface;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2023-05-25

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