Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors-Reference-Cited by-同舟云学术

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Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

Published:2012-06-22 Issue:7 Volume:27 Page:074012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Xie Qi,Deng Shaoren,Schaekers Marc,Lin Dennis,Caymax Matty,Delabie Annelies,Qu Xin-Ping,Jiang Yu-Long,Deduytsche Davy,Detavernier Christophe

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference121 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Development of hafnium based high-k materials—A review

3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

4. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

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