Investigating temperature reliability of RF performance metrics and linearity for double gate doping less TFET

Abstract

Abstract The Doping Less Tunnel Field Effect Transistor (DL-TFET) is gaining recognition as a promising TFET structure due to its resistance to random dopant fluctuations (RDFs) and the elimination of high thermal budgets and costly annealing techniques. However, temperature sensitivity remains a critical factor in assessing the device’s reliability, as the bandgap of the semiconductor material (E g ) varies with temperature fluctuations. Therefore, this study investigates the impact of temperature changes (ranging from 240 to 360 Kelvin) on the linearity and RF/analog characteristics of a Heterojunction (HJ), Double Gate (DG), Doping Less (DL) TFET.The analysis encompasses various RF/analog and DC parameters, including I D − V G characteristics, I D − V D characteristics, gm (transconductance), gd (output conductance), f T (cut-off frequency), GBP (Gain Bandwidth Product), TGF (transconductance generation factor), and TFP (transconductance frequency product). These parameters are evaluated using the ATLAS simulation tool, taking into account the influence of temperature fluctuations. Furthermore, the study considers temperature variations when assessing linearity characteristics such as the second-order Voltage Intercept Point (VIP2), third-order Voltage Intercept Point (VIP3), intermodulation distortion (IMD3), and third-order input-interception point (IIP3).