Interface band alignment of amorphous Ga2O3/Ge heterojunctions fabricated by atomic layer deposition

Author:

Yang Ruo-Yun,Cao Xi-YuanORCID,Ma Hong-Ping,Wen Xiao-Hong,Zhao Xue-Feng,Yang Lei,Shen Yi

Publisher

Elsevier BV

Reference46 articles.

1. Self-powered solar-blind deep-UV photodetector based on CuI/Ga2O3 heterojunction with high sensitivity;Liu;Sens. Actuator Phys.,2023

2. Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere;Liu;J. Mater. Sci. Mater. Electron.,2012

3. Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy;Baldini;J. Mater. Sci.,2016

4. Interfacial Engineering of SnS/Ga2O Heterojunction by SnO for a High‐Performance Self‐Powered Solar‐Blind UV Photodetector - Wu - 2022 - Advanced Materials Interfaces - Wiley Online Library, (n.d.). https://onlinelibrary.wiley.com/doi/full/10.1002/admi.202200851 (accessed December 28, 2022).

5. Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction;Ayhan;Mater. Lett.,2020

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