Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices-Reference-Cited by-同舟云学术

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Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Published:2006-04-03 Issue:14 Volume:88 Page:141904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Van Elshocht S.,Caymax M.,Conard T.,De Gendt S.,Hoflijk I.,Houssa M.,De Jaeger B.,Van Steenbergen J.,Heyns M.,Meuris M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2192576

Reference14 articles.

1. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

2. Preparation of clean and atomically flat germanium(001) surfaces

3. Oxygen roughening of Ge(001) surfaces

4. Oxygen scattering and initial chemisorption probability on Ge(100)

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