Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer-Reference-Cited by-同舟云学术

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Published:2017-07-31 Issue:5 Volume:111 Page:053501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Yong¹²,Xu Jing-Ping¹,Liu Lu¹,Cheng Zhi-Xiang¹^ORCID,Lai Pui-To³,Tang Wing-Man⁴

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. School of Information and Engineering, Hubei University for Nationalities, Enshi, Hubei 445000, China

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Pokfulam, Hong Kong

4. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

Funder

the University Development Fund of the Hong Kong Polytechnic University

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4996722

Reference33 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Interface control of high-k gate dielectrics on Ge

3. Scalability and Electrical Properties of Germanium Oxynitride MOS Dielectrics

4. Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

5. Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric

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