A review of rare-earth oxide films as high k dielectrics in MOS devices — Commemorating the 100th anniversary of the birth of Academician Guangxian Xu-Reference-Cited by-同舟云学术

A review of rare-earth oxide films as high k dielectrics in MOS devices — Commemorating the 100th anniversary of the birth of Academician Guangxian Xu

Published:2021-02 Issue:2 Volume:39 Page:121-128
ISSN:1002-0721
Container-title:Journal of Rare Earths
language:en
Short-container-title:Journal of Rare Earths

Author:

Li Shuan,Lin Youyu,Tang Siyao,Feng Lili^ORCID,Li Xingguo

Funder

China Postdoctoral Science Foundation

Ministry of Science and Technology of the People's Republic of China

Publisher

Elsevier BV

Subject

Geochemistry and Petrology,General Chemistry

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