Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance
Author:
Affiliation:
1. Department of Physics, School of Science, Jimei University, Xiamen 361021, China
2. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Funder
Natural Science Foundation of Fujian Province
Science, Technology and Innovation Commission of Shenzhen Municipality
National Natural Science Foundation of China
Scientific Research Starting Foundation of Jimei University
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c12891
Reference50 articles.
1. Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review
2. General synthesis of 2D rare-earth oxide single crystals with tailorable facets
3. A review of rare-earth oxide films as high k dielectrics in MOS devices — Commemorating the 100th anniversary of the birth of Academician Guangxian Xu
4. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices
5. Advances in La-Based High-k Dielectrics for MOS Applications
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