Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3647621
Reference13 articles.
1. Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
2. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
3. Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
4. Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures
5. Thermal stability and band alignments for Ge3N4 dielectrics on Ge
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3. Impact of N2O/NH3/N2 Gas Mixture on the Interface Quality of Germanium MOS Capacitors;ECS Transactions;2016-08-18
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