Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2959731
Reference20 articles.
1. D.L.T.S. measurements of a germanium M-I-S interface
2. Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium
3. Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference
4. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study
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