HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment-Reference-Cited by-同舟云学术

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HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Published:2016-02 Issue: Volume:364 Page:747-751
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Agrawal Khushabu S.,Patil Vilas S.,Khairnar Anil G.,Mahajan Ashok M.

Funder

Government of India

Junior Research Fellowships

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment

2. Department of Material Science and Engineering;Kim,2004

3. Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

4. Characteristics of Pure Ge3N4Dielectric Layers Formed by High-Density Plasma Nitridation

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