High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate-Reference-Cited by-同舟云学术

High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

Published:2016 Issue:4 Volume:4 Page:850-856
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Seok Tae Jun¹²³⁴,Cho Young Jin⁵⁶⁷⁴⁸,Jin Hyun Soo¹²³⁴,Kim Dae Hyun⁹²³⁴,Kim Dae Woong¹²³⁴,Lee Sang-Moon¹⁰¹¹¹²¹³⁴,Park Jong-Bong¹⁴¹⁵⁶⁷⁴,Won Jung-Yeon¹⁴¹⁵⁶⁷⁴,Kim Seong Keun¹⁶¹⁷¹⁸⁴,Hwang Cheol Seong⁸¹⁹²⁰⁴,Park Tae Joo¹²³⁴⁹

Affiliation:

1. Department of Materials Science & Engineering

2. Hanyang University

3. Ansan 15588

4. Korea

5. Inorganic Material Laboratory

6. Samsung Advanced Institute of Technology

7. Suwon 443-803

8. Department of Materials Science & Engineering and Inter-university Semiconductor Research Center

9. Department of Advance Materials Engineering

10. Process Development Team

11. Semiconductor R&D center

12. Samsung Electronics Co. Ltd

13. Hwasung 445-701

14. Analytical Engineering Group

15. Platform Technology Lab.

16. Center for Electronic Materials

17. Korea Institute of Science and Technology

18. Seoul

19. Seoul National University

20. Seoul 151-742

Abstract

The effects of interface sulfur passivation for ALD HfO₂/Ge substrate were studied through the (NH₄)₂S solution treatment and the rapid thermal annealing under an H₂S atmosphere.

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03267A

Reference29 articles.

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