Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation-Reference-Cited by-同舟云学术

Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Published:2016-11-07 Issue:19 Volume:109 Page:193504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Yong¹²,Xu Jing-Ping¹,Liu Lu¹,Lai Pui-To³,Tang Wing-Man⁴

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. School of Information and Engineering, Hubei University for Nationalities, Enshi, Hubei 445000, China

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

4. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

Funder

the university development fund of the Hong Kong Polytechnic University

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4967186

Reference39 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. Interface control of high-k gate dielectrics on Ge

3. Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

4. Al2O3/GeO2 stacked gate dielectrics formed by post-deposition oxidation of ultrathin metal Al layer directly grown on Ge substrates

5. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

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