Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers-Reference-Cited by-同舟云学术

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Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers

Published:2020-05-08 Issue:22 Volume:12 Page:25390-25399
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Die¹,He Gang¹²^ORCID,Hao Lin¹,Qiao Lesheng¹,Fang Zebo³,Liu Jiangwei⁴

Affiliation:

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China

2. Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China

3. School of Mathematical Information, Shaoxing University, Shaoxing 312000, China

4. Research Center for Functional Materials, National Institute for Materials Science (NIMS), Ibaraki 305-0044, Japan

Funder

Anhui University

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c02963

Reference39 articles.

1. Charge trapping in nitrided HfSiO gate dielectric layers

2. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor

3. Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering

4. Development of hafnium based high-k materials—A review

5. Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

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1. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications;ACS Applied Materials & Interfaces;2024-06-05

2. Composition-dependent structure and bandgaps in HfxZr1−xO2 thin films;Applied Physics Letters;2024-03-18

3. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO₂/Al₂O₃ Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10

4. Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment;Nanomaterials;2023-05-26

5. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

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