Charge trapping in nitrided HfSiO gate dielectric layers-Reference-Cited by-同舟云学术

Charge trapping in nitrided HfSiO gate dielectric layers

Published:2006-08-28 Issue:9 Volume:89 Page:092902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vellianitis G.,Rittersma Z. M.,Pétry J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2339049

Reference8 articles.

1. International Technology Roadmap for Semiconductors, 2005 ed., Process Integration, Devices, and Structures (Semiconductor Industry Association, San Jose, CA, 1997), p. 10.

2. MRS Spring Meeting, Symposium E;Pétry J.,2006

3. Review on high-k dielectrics reliability issues

4. IRPS;Kerber A.,2003

5. Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN∕GaN heterostructures

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