Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyOx/Ge gate stacks using doping concentration and thermal treatment-Reference-Cited by-同舟云学术

Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyOx/Ge gate stacks using doping concentration and thermal treatment

Published:2020 Issue:2 Volume:10 Page:938-951
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Die¹²³⁴⁵,He Gang¹²³⁴⁵^ORCID,Fang Zebo⁶⁷⁸⁵,Hao Lin¹²³⁴⁵,Sun Zhaoqi¹²³⁴⁵,Liu Yanmei¹²³⁴⁵

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230601

5. P. R. China

6. School of Mathematical Information

7. Shaoxing University

8. Shaoxing 312000

Abstract

In this work, the effects of different Dy-doping concentrations and annealing temperatures on the interfacial chemistry and electrical properties of TMA-passivated HfDyO_x/Ge gate stacks have been investigated systematically.

Funder

National Natural Science Foundation of China

Anhui University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/C9RA08335A

Reference36 articles.

1. Charge trapping in nitrided HfSiO gate dielectric layers

2. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor

3. Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With $\hbox{HfO}_{2}/\hbox{Dy}_{2}\hbox{O}_{3}$ Gate Stacks

4. Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

5. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

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