Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3515923
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Spectroscopic ellipsometry characterization of nitrogen-incorporated HfO2 gate dielectrics grown by radio-frequency reactive sputtering
3. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)
4. Composition dependence of electronic structure and optical properties of Hf1−xSixOy gate dielectrics
5. Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy
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